AO4409 30v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) - 15a r ds(on) (at v gs =-10v) < 7.5m w r ds(on) (at v gs =-4.5v) < 12m w 100% uis tested 100% r g tested symbol v ds drain-source voltage -30 the AO4409 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge. this d evice is suitable for use as a load switch or in pwm applications. * rohs and halogen-free compliant v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v g d s soic-8 t op view bottom view d d d d s s s g v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q j l thermal characteristics p ower dissipation b p d c/w 4 0 3.1 units w maximum junction-to-ambient a 2 t a =70c j unction and storage temperature range -55 to 150 c v 20 gate-source voltage drain-source voltage -30 v a i d -15 - 12.8 -80 t a =25c t a =70c p ulsed drain current c continuous drain c urrent maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 r q j a 31 5 9 parameter 30 a avalanche energy l=0.3mh c 135 m j avalanche current c t a =25c t yp max rev.8.0: july 2013 www.aosmd.com page 1 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4409 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -5 t j =55c -25 i gss 100 na v gs(th) gate threshold voltage -1.4 -1.9 -2.7 v i d(on) -80 a 6.2 7.5 t j =125c 8.2 11.5 9.5 12 m w g fs 35 50 s v sd -0.71 -1 v i s -5 a c iss 5270 6400 pf c oss 945 pf c rss 745 pf r g 2 3 w q g (10v) 100 120 nc q g (4.5v) 51.5 nc q gs 14.5 nc q gd 23 nc t d(on) 14 ns t 16.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-10v, v =-15v, r =1 w , gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance total gate charge v gs =-10v, v ds =-15v, i d =-15a gate source charge gate drain charge total gate charge on state drain current i s =-1a,v gs =0v v ds =-5v, i d =-15a v gs =-4.5v, i d =-10a forward transconductance diode forward voltage v gs =-10v, v ds =-5v v gs =-10v, i d =-15a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v t r 16.5 ns t d(off) 76.5 ns t f 37.5 ns t rr 36.7 45 ns q rr 28 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-15a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1 w , r gen =3 w turn-off fall time i f =-15a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev.8.0: july 2013 www.aosmd.com page 2 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4409 typical electrical and thermal characteristics 17 5 2 10 0 18 0 1 0 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 1 0 12 0 5 10 15 20 25 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =-4.5v v g s =-10v i d = -15a 25 c 125 c v ds =-5v v g s =-4.5v v g s =-10v 0 1 0 20 30 40 50 60 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3v -3.5v -4 .5v -6v -10v -4v 40 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 125 (note e) 0 5 1 0 15 20 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = -15a 25 125 rev.8.0: july 2013 www.aosmd.com page 3 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4409 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 20 40 60 80 100 120 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =-15v i d =-15a 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a = 25 c 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w rev.8.0: july 2013 www.aosmd.com page 4 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4409 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev.8.0: july 2013 www.aosmd.com page 5 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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